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| AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Lower Gate Charge Fast Switching Performance RoHS Compliant SO-8 SO-8 D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1S2 G1 S1 S1 35V 22m 7.7A -35V 40m -5.7A D2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 20 7.7 6.2 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 12 -5.7 -4.6 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200408051-1/7 AP4515GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 12 11 3.5 6 11 5 23 5 950 150 100 2.6 Max. Units 22 36 3 1 25 30 18 1520 4 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=7A VDS=32V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/s Min. - Typ. 18 12 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4515GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 8 10 2 6 10 6 30 10 700 175 130 6 Max. Units 40 70 -3 -1 -25 30 16 1120 9 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=12V ID=-5A VDS=-25V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-5V RD=15 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 19 13 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. 3/7 AP4515GM N-Channel 60 60 T A = 25 o C ID , Drain Current (A) 10V 7.0V ID , Drain Current (A) T A =150 o C 40 10V 7.0V 40 5.0V 4.5V 5.0V 4.5V 20 20 V G =3.0V 0 0 2 4 6 8 0 0 2 4 6 V G =3.0V 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 1.8 ID=5A T A =25 o C 45 I D =7A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (m ) 35 1.0 25 -6.3 -5 15 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 7 Normalized VGS(th) (V) 1.2 1.2 T j =150 o C IS(A) 3.5 T j =25 o C 0.8 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4515GM N-Channel f=1.0MHz 12 10000 10 VGS , Gate to Source Voltage (V) ID=7A V DS = 25 V 8 6 C (pF) 1000 C iss 4 2 C oss C rss 100 0 0 4 8 12 16 20 24 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us ID (A) 1ms 1 0.1 0.1 0.05 PDM 0.02 0.01 10ms 100ms 0.1 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 0.01 Single Pulse T A =25 o C Single Pulse 1s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =5V ID , Drain Current (A) 30 VG T j =25 o C T j =150 o C QG 4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4515GM P-Channel 50 50 T A = 25 o C 40 -10 V - 7.0 V 40 T A =150 C o -10 V - 7.0 V -ID , Drain Current (A) -ID , Drain Current (A) - 5.0 V 30 30 - 5.0 V - 4.5 V - 4.5 V 20 20 10 10 V G = - 3.0 V V G = -3.0 V 0 0 2 4 6 8 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 110 1.7 I D = -3 A 90 T A =25 o C Normalized RDS(ON) I D = -5 A V G = -10 V 1.4 RDS(ON) (m) 70 1.1 50 0.8 30 0.5 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 5 4 Normalized -VGS(th) (V) 1.2 1.1 -IS(A) 3 T j =150 o C 2 T j =25 o C 0.7 1 0 0 0.2 0.4 0.6 0.8 1 0.3 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4515GM P-Channel f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 I D =-5A V DS =-25V C iss 8 6 4 C (pF) C oss 2 C rss 0 0 5 10 15 20 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us 1ms -ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 135/W 0.1 T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =-5V -ID , Drain Current (A) 30 VG T j =25 o C T j =150 o C QG -4.5V 20 QGS QGD 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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